WebIridium oxide films were successfully grown using (MeCp) Ir(CHD) and ozone between 100 and 180 degrees C, however, the density of the films substantially reduced at 120 degrees C and below. The density reduction was accompanied by a phase change from crystalline to amorphous IrO2. Metallic iridium films were deposited between 120 and 180 ... WebMGDenotes a CHP system that is part of a microgrid, a group of interconnected loads and distributed energy resources (DERs) that can disconnect and re-connect to the utility grid …
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WebOther types of cyclopentadienyl containing molecules are described in U.S. Pat. No. 6,329,286. The iridium precursors described in this patent are of the formula (MeCp)Ir(CO) 2, which is described as a liquid at 58° C. Surprisingly, (MeCp)Ir(CO) 2 is used dissolved in a solvent. Bis(ethylene)(ethylcyclopentadienyl) iridium is described in U.S. Pat. No. 7,265,233. WebJul 19, 2024 · The authors of [38, 42] used the double second reactants (the ozone pulse followed by the hydrogen pulse) and clearly identified the ALD windows on the ascending kinetic curves when obtaining iridium from the Ir(acac) 3 and (MeCp)Ir(chd) precursors in the presence of oxygen. inbody120價錢
Iridium metal and iridium oxide thin films grown by …
WebAbstract. Iridium thin films were grown by atomic layer deposition ( ALD) between 225 and 350 °C using (MeCp)Ir (CHD) ( MeCp = methylcyclopentadienyl, CHD = cyclohexadiene) and molecular oxygen as precursors. (MeCp)Ir (CHD) precursor was synthesized and … WebIridium oxide films were successfully grown using (MeCp) Ir(CHD) and ozone between 100 and 180 degrees C, however, the density of the films substantially reduced at 120 degrees … Web(MeCp)Ir(CHD) and molecular oxygen as precursors in atomic layer deposition of iridium: Journal: Journal of Materials Chemistry: Authors: Hämäläinen, Jani: Author: Hatanpää, … inbody webshop